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SIHG22N60E-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIHG22N60E-GE3

Datasheet:
Description:

MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 227 W 600 V Continuous Drain Current (ID):21 A 57 nC

ParameterValue
Length15.87 mm
Width5.31 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Resistance180 mΩ
Height20.82 mm
PackagingTube
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Number of Elements1
Max Power Dissipation227 W
Power Dissipation227 W
Threshold Voltage2 V
Number of Channels1
Input capacitance1.92 nF
Continuous Drain Current (ID)21 A
Rds On Max180 mΩ
Drain to Source Voltage (Vdss)600 V
FET Type(Transistor Polarity)N-Channel
Turn-On Delay Time18 ns
Turn-Off Delay Time59 ns
Element ConfigurationSingle
Fall Time54 ns
Rise Time68 ns
Gate Charge57 nC
Drain to Source Resistance180 mΩ
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)600 V
Schedule B8541290080
Gate to Source Threshold Voltage4 V

Stock: 1

Distributors
pcbx
Unit Price$2.00367
Ext.Price$2.00367
QtyUnit PriceExt.Price
1$2.00367$2.00367
10$1.96049$19.60490
25$1.94066$48.51650
50$1.92103$96.05150
100$1.90159$190.15900
300$1.90159$570.47700
500$1.90159$950.79500
1000$1.90159$1901.59000