SIHG23N60E-GE3
Manufacturer:
Vishay
Mfr.Part #:
SIHG23N60E-GE3
Datasheet:
Description:
MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 227 W 600 V Continuous Drain Current (ID):23 A 63 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Resistance | 158 mΩ |
| Packaging | Tube |
| RoHS | Compliant |
| Max Power Dissipation | 227 W |
| Power Dissipation | 227 W |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 23 A |
| Drain to Source Voltage (Vdss) | 600 V |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 63 nC |
| Drain to Source Resistance | 158 mΩ |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Gate to Source Threshold Voltage | 4 V |
Stock: 435
Distributors
pcbx
pcbxUnit Price$3.49239
Ext.Price$3.49239
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $3.49239 | $3.49239 |
| 10 | $2.36559 | $23.65590 |
| 25 | $2.20471 | $55.11775 |
| 50 | $2.05477 | $102.73850 |
| 100 | $1.91504 | $191.50400 |
| 300 | $1.80547 | $541.64100 |
| 500 | $1.70217 | $851.08500 |
| 1000 | $1.30804 | $1308.04000 |