SIHG33N60E-GE3
Manufacturer:
Vishay
Mfr.Part #:
SIHG33N60E-GE3
Datasheet:
Description:
MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 278 W 600 V Continuous Drain Current (ID):33 A 103 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Bulk |
| RoHS | Compliant |
| Power Dissipation | 278 W |
| Number of Channels | 1 |
| Input capacitance | 3.508 nF |
| Continuous Drain Current (ID) | 33 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 103 nC |
| Drain to Source Resistance | 98 mΩ |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Gate to Source Threshold Voltage | 4 V |
Stock: 323
Distributors
pcbx
pcbxUnit Price$4.52429
Ext.Price$4.52429
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $4.52429 | $4.52429 |
| 10 | $3.37954 | $33.79540 |
| 25 | $3.14935 | $78.73375 |
| 50 | $2.93484 | $146.74200 |
| 100 | $2.73492 | $273.49200 |
| 300 | $2.57690 | $773.07000 |
| 500 | $2.42800 | $1214.00000 |
| 1000 | $1.87743 | $1877.43000 |