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SIHH26N60E-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIHH26N60E-T1-GE3

Datasheet:
Description:

MOSFETs PowerTDFN-8 SMD/SMT N-Channel number of channels:1 202 W 600 V Continuous Drain Current (ID):25 A 77 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
PackagingReel
RoHSCompliant
REACH SVHCUnknown
Output Current1.4 A
Max Power Dissipation202 W
Power Dissipation202 W
Threshold Voltage4 V
Number of Channels1
Input capacitance2.815 nF
Continuous Drain Current (ID)25 A
Rds On Max135 mΩ
Drain to Source Voltage (Vdss)600 V
FET Type(Transistor Polarity)N-Channel
Gate Charge77 nC
Drain to Source Resistance117 mΩ
Gate to Source Voltage (Vgs)-30 V, 30 V
Drain to Source Breakdown Voltage (Vds)600 V
Gate to Source Threshold Voltage4 V

Stock: 1800

Distributors
pcbx
Unit Price$3.54197
Ext.Price$3.54197
QtyUnit PriceExt.Price
1$3.54197$3.54197
10$2.67251$26.72510
25$2.39932$59.98300
50$2.15406$107.70300
100$1.93385$193.38500
300$1.86901$560.70300
500$1.80635$903.17500
1000$1.74577$1745.77000
3000$1.57734$4732.02000