SIHJ10N60E-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SIHJ10N60E-T1-GE3
Datasheet:
Description:
MOSFETs PowerPAK SO-8 Dual SMD/SMT N-Channel number of channels:1 89 W 600 V Continuous Drain Current (ID):10 A 25 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Height | 1.267 mm |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 89 W |
| Number of Channels | 1 |
| Input capacitance | 784 pF |
| Continuous Drain Current (ID) | 10 A |
| Drain to Source Voltage (Vdss) | 600 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 16 ns |
| Turn-Off Delay Time | 31 ns |
| Gate Charge | 25 nC |
| Drain to Source Resistance | 313 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 4.5 V |
Stock: 7739
Distributors
pcbx
pcbxUnit Price$2.25913
Ext.Price$2.25913
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.25913 | $2.25913 |
| 10 | $1.47789 | $14.77890 |
| 25 | $1.31141 | $32.78525 |
| 50 | $1.16368 | $58.18400 |
| 100 | $1.03258 | $103.25800 |
| 300 | $0.96599 | $289.79700 |
| 500 | $0.90370 | $451.85000 |
| 1000 | $0.81683 | $816.83000 |
| 3000 | $0.73832 | $2214.96000 |