SIHP11N80E-GE3
Manufacturer:
Vishay
Mfr.Part #:
SIHP11N80E-GE3
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole N-Channel number of channels:1 179 W 800 V Continuous Drain Current (ID):12 A 88 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 179 W |
| Number of Channels | 1 |
| Input capacitance | 1.67 nF |
| Continuous Drain Current (ID) | 12 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 88 nC |
| Drain to Source Resistance | 380 mΩ |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 800 V |
| Gate to Source Threshold Voltage | 4 V |
Stock: 761
Distributors
pcbx
pcbxUnit Price$2.51606
Ext.Price$2.51606
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.51606 | $2.51606 |
| 10 | $1.83981 | $18.39810 |
| 25 | $1.69774 | $42.44350 |
| 50 | $1.56664 | $78.33200 |
| 100 | $1.44569 | $144.56900 |
| 300 | $1.36522 | $409.56600 |
| 500 | $1.28923 | $644.61500 |
| 1000 | $1.10115 | $1101.15000 |