SIHP22N60E-GE3
Manufacturer:
Vishay
Mfr.Part #:
SIHP22N60E-GE3
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 227 W 600 V Continuous Drain Current (ID):21 A 57 nC
| Parameter | Value |
|---|---|
| Gate Charge | 57 nC |
| Gate to Source Threshold Voltage | 4 V |
| Continuous Drain Current (ID) | 21 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 180 mΩ |
| Input capacitance | 1.92 nF |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Power Dissipation | 227 W |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Number of Channels | 1 |
| Packaging | Tube |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 473
Distributors
pcbx
pcbxUnit Price$2.47844
Ext.Price$2.47844
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.47844 | $2.47844 |
| 10 | $2.00224 | $20.02240 |
| 25 | $1.86609 | $46.65225 |
| 50 | $1.73920 | $86.96000 |
| 100 | $1.62094 | $162.09400 |
| 300 | $1.58287 | $474.86100 |
| 500 | $1.54571 | $772.85500 |
| 1000 | $1.13278 | $1132.78000 |