SIHP30N60E-GE3
Manufacturer:
Vishay
Mfr.Part #:
SIHP30N60E-GE3
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole N-Channel number of channels:1 250 W 600 V Continuous Drain Current (ID):29 A 85 nC
| Parameter | Value |
|---|---|
| Length | 10.51 mm |
| Width | 4.65 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 125 mΩ |
| Height | 15.49 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 250 W |
| Power Dissipation | 250 W |
| Threshold Voltage | 2 V |
| Number of Channels | 1 |
| Input capacitance | 2.6 nF |
| Continuous Drain Current (ID) | 29 A |
| Rds On Max | 125 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 19 ns |
| Turn-Off Delay Time | 63 ns |
| Element Configuration | Single |
| Fall Time | 36 ns |
| Rise Time | 32 ns |
| Gate Charge | 85 nC |
| Drain to Source Resistance | 125 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Gate to Source Threshold Voltage | 2.8 V |
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