SIR422DP-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SIR422DP-T1-GE3
Datasheet:
Description:
MOSFETs PowerPAK® SO-8 SMD/SMT N-Channel number of channels:1 5 W 40 V Continuous Drain Current (ID):40 A 48 nC
| Parameter | Value |
|---|---|
| Length | 5.969 mm |
| Width | 5.0038 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 6.6 mΩ |
| Height | 1.12 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Number of Elements | 1 |
| Max Power Dissipation | 34.7 W |
| Power Dissipation | 5 W |
| Threshold Voltage | 2.5 V |
| Number of Channels | 1 |
| Input capacitance | 1.785 nF |
| Continuous Drain Current (ID) | 40 A |
| Rds On Max | 6.6 mΩ |
| Drain to Source Voltage (Vdss) | 40 V |
| Turn-On Delay Time | 19 ns |
| Turn-Off Delay Time | 28 ns |
| Element Configuration | Single |
| Fall Time | 11 ns |
| Rise Time | 84 ns |
| Gate Charge | 48 nC |
| Drain to Source Resistance | 5.4 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 1.2 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 40 V |
| Gate to Source Threshold Voltage | 1.2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 1641
Distributors
pcbx
pcbxUnit Price$0.47107
Ext.Price$0.47107
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.47107 | $0.47107 |
| 10 | $0.41952 | $4.19520 |
| 25 | $0.40356 | $10.08900 |
| 50 | $0.38821 | $19.41050 |
| 100 | $0.37345 | $37.34500 |
| 300 | $0.36570 | $109.71000 |
| 500 | $0.35812 | $179.06000 |
| 1000 | $0.34891 | $348.91000 |