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SIR468DP-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIR468DP-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK SO-8 SMD/SMT N-Channel number of channels:1 5 W 30 V Continuous Drain Current (ID):40 A 44 nC

ParameterValue
Length4.9 mm
Width5.89 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance5.7 mΩ
Height1.04 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Number of Elements1
Max Power Dissipation50 W
Power Dissipation5 W
Threshold Voltage3 V
Number of Channels1
Input capacitance1.72 nF
Continuous Drain Current (ID)40 A
Rds On Max5.7 mΩ
Drain to Source Voltage (Vdss)30 V
Turn-On Delay Time25 ns
Turn-Off Delay Time30 ns
Fall Time9 ns
Rise Time9 ns
Gate Charge44 nC
Drain to Source Resistance5.7 mΩ
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)30 V
Schedule B8541290080
Gate to Source Threshold Voltage3 V
FET Type(Transistor Polarity)N-Channel

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