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SIR662DP-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIR662DP-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK SO-8 SMD/SMT N-Channel number of channels:1 6.25 W 60 V Continuous Drain Current (ID):60 A 96 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance2.7 MΩ
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Weight506.605978 mg
Number of Elements1
Max Power Dissipation104 W
Power Dissipation6.25 W
Threshold Voltage1 V
Number of Channels1
Input capacitance4.365 nF
Continuous Drain Current (ID)60 A
Rds On Max2.7 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate Charge96 nC
Drain to Source Resistance2.7 mΩ
Nominal Vgs1 V
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)60 V
Schedule B8541290080
Gate to Source Threshold Voltage1 V
FET Type(Transistor Polarity)N-Channel

Stock: 9313

Distributors
pcbx
Unit Price$1.21400
Ext.Price$1.21400
QtyUnit PriceExt.Price
1$1.21400$1.21400
10$1.00113$10.01130
25$0.89937$22.48425
50$0.80795$40.39750
100$0.72583$72.58300
300$0.67027$201.08100
500$0.61897$309.48500
1000$0.61042$610.42000
3000$0.53347$1600.41000