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SIR664DP-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIR664DP-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK SO-8 SMD/SMT N-Channel number of channels:1 5 W 60 V Continuous Drain Current (ID):60 A 26 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
PackagingReel
Radiation HardeningNo
RoHSCompliant
Contact PlatingTin
Number of Elements1
Max Power Dissipation5 W
Power Dissipation5 W
Number of Channels1
Input capacitance1.75 nF
Continuous Drain Current (ID)60 A
Rds On Max6 mΩ
Drain to Source Voltage (Vdss)60 V
Turn-Off Delay Time24 ns
Element ConfigurationSingle
Rise Time12 ns
Gate Charge26 nC
Drain to Source Resistance6 mΩ
Gate to Source Voltage (Vgs)-20 V, 20 V
Drain to Source Breakdown Voltage (Vds)60 V
Schedule B8541290080
Gate to Source Threshold Voltage1.3 V
FET Type(Transistor Polarity)N-Channel

Stock: 4320

Distributors
pcbx
Unit Price$0.85750
Ext.Price$0.85750
QtyUnit PriceExt.Price
1$0.85750$0.85750
10$0.56426$5.64260
25$0.50209$12.55225
50$0.44677$22.33850
100$0.39754$39.75400
300$0.37374$112.12200
500$0.35137$175.68500
1000$0.32146$321.46000
3000$0.28127$843.81000
5000$0.26903$1345.15000
10000$0.25733$2573.30000