SIR802DP-T1-GE3
Manufacturer:
VBsemi
Mfr.Part #:
SIR802DP-T1-GE3
Datasheet:
Description:
MOSFETs DFN-8 SMD/SMT N-Channel 250 W 30 V Continuous Drain Current (ID):100 A 257 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 250 W |
| Input capacitance | 2.765 nF |
| Continuous Drain Current (ID) | 100 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 257 nC |
| Drain to Source Resistance | 1.8 mΩ |
| Gate to Source Voltage (Vgs) | ±20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Gate to Source Threshold Voltage | 2.5 V |
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