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SIR802DP-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIR802DP-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK SO-8 SMD/SMT N-Channel number of channels:1 4.6 W 20 V Continuous Drain Current (ID):30 A 32 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance5 mΩ
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Number of Elements1
Max Power Dissipation27.7 W
Power Dissipation4.6 W
Threshold Voltage600 mV
Number of Channels1
Input capacitance1.785 nF
Continuous Drain Current (ID)30 A
Rds On Max5 mΩ
Drain to Source Voltage (Vdss)20 V
Turn-On Delay Time19 ns
Turn-Off Delay Time36 ns
Fall Time13 ns
Rise Time14 ns
Gate Charge32 nC
Drain to Source Resistance5 mΩ
Gate to Source Voltage (Vgs)12 V
Drain to Source Breakdown Voltage (Vds)20 V
Gate to Source Threshold Voltage1.5 V
FET Type(Transistor Polarity)N-Channel

Stock: 1

Distributors
pcbx
Unit Price$2.38253
Ext.Price$2.38253
QtyUnit PriceExt.Price
1$2.38253$2.38253
10$2.33770$23.37700
25$2.32475$58.11875
50$2.31187$115.59350
100$2.29909$229.90900