SIR812DP-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SIR812DP-T1-GE3
Datasheet:
Description:
MOSFETs PowerPAK SO-8 SMD/SMT N-Channel number of channels:1 6.25 W Continuous Drain Current (ID):60 A
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Number of Elements | 1 |
| Max Power Dissipation | 104 W |
| Power Dissipation | 6.25 W |
| Threshold Voltage | 1 V |
| Number of Channels | 1 |
| Input capacitance | 10.24 nF |
| Continuous Drain Current (ID) | 60 A |
| Rds On Max | 1.45 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Resistance | 1.65 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Schedule B | 8541290080 |
| FET Type(Transistor Polarity) | N-Channel |
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