SIR826ADP-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SIR826ADP-T1-GE3
Datasheet:
Description:
MOSFETs PowerPAK-SO-8 SMD/SMT N-Channel number of channels:1 6.25 W 80 V Continuous Drain Current (ID):23.8 A 86 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 5.5 mΩ |
| Height | 1.12 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Manufacturer Package Identifier | S17-0173-Single |
| REACH SVHC | Unknown |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 104 W |
| Power Dissipation | 6.25 W |
| Threshold Voltage | 1.2 V |
| Number of Channels | 1 |
| Input capacitance | 2.8 nF |
| Continuous Drain Current (ID) | 23.8 A |
| Rds On Max | 5.5 mΩ |
| Drain to Source Voltage (Vdss) | 80 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 9 ns |
| Turn-Off Delay Time | 32 ns |
| Element Configuration | Single |
| Fall Time | 8 ns |
| Rise Time | 15 ns |
| Gate Charge | 86 nC |
| Drain to Source Resistance | 4.6 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 80 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1.2 V |
Stock: 2322
Distributors
pcbx
pcbxUnit Price$1.77141
Ext.Price$1.77141
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.77141 | $1.77141 |
| 10 | $1.32685 | $13.26850 |
| 25 | $1.17689 | $29.42225 |
| 50 | $1.04388 | $52.19400 |
| 100 | $0.92589 | $92.58900 |
| 300 | $0.85430 | $256.29000 |
| 500 | $0.78824 | $394.12000 |
| 1000 | $0.71282 | $712.82000 |
| 3000 | $0.64462 | $1933.86000 |