0%
Uploading...

SIR836DP-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIR836DP-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK SO-8 SMD/SMT N-Channel number of channels:1 3.9 W 40 V Continuous Drain Current (ID):21 A 11.8 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance22.5 MΩ
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Contact PlatingTin
Number of Elements1
Max Power Dissipation15.6 W
Power Dissipation3.9 W
Number of Channels1
Input capacitance600 pF
Continuous Drain Current (ID)21 A
Rds On Max19 mΩ
Drain to Source Voltage (Vdss)40 V
Turn-On Delay Time14 ns
Turn-Off Delay Time17 ns
Fall Time11 ns
Rise Time19 ns
Gate Charge11.8 nC
Drain to Source Resistance19 mΩ
Nominal Vgs1.2 V
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)40 V
Schedule B8541290080
Gate to Source Threshold Voltage1.2 V
FET Type(Transistor Polarity)N-Channel

Stock: 768

Distributors
pcbx
Unit Price$0.67094
Ext.Price$0.67094
QtyUnit PriceExt.Price
1$0.67094$0.67094
10$0.55738$5.57380
25$0.51840$12.96000
50$0.48215$24.10750
100$0.44843$44.84300
300$0.41172$123.51600
500$0.37801$189.00500
1000$0.36123$361.23000