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SIR882ADP-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIR882ADP-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK SO-8 SMD/SMT N-Channel number of channels:1 5.4 W 100 V Continuous Drain Current (ID):60 A 60 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance8.7 mΩ
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Number of Elements1
Max Power Dissipation83 W
Power Dissipation5.4 W
Threshold Voltage1.2 V
Number of Channels1
Input capacitance1.975 nF
Continuous Drain Current (ID)60 A
Rds On Max8.7 mΩ
Drain to Source Voltage (Vdss)100 V
Turn-On Delay Time11 ns
Turn-Off Delay Time34 ns
Element ConfigurationSingle
Fall Time9 ns
Rise Time12 ns
Gate Charge60 nC
Drain to Source Resistance8.7 mΩ
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)100 V
Schedule B8541290080
Gate to Source Threshold Voltage1.2 V
FET Type(Transistor Polarity)N-Channel

Stock: 282

Distributors
pcbx
Unit Price$1.19002
Ext.Price$1.19002
QtyUnit PriceExt.Price
1$1.19002$1.19002
10$1.19273$11.92730
25$1.19544$29.88600
50$1.19816$59.90800
100$1.20086$120.08600