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SIRA00DP-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIRA00DP-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK SO-8 SMD/SMT N-Channel number of channels:1 6.25 W 30 V Continuous Drain Current (ID):60 A 220 nC

ParameterValue
Length5.99 mm
Width5 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance4 mΩ
Height1.07 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Contact PlatingTin
Number of Elements1
Max Power Dissipation104 W
Power Dissipation6.25 W
Threshold Voltage1.1 V
Number of Channels1
Input capacitance11.7 nF
Continuous Drain Current (ID)60 A
Rds On Max1 mΩ
Drain to Source Voltage (Vdss)30 V
Turn-On Delay Time18 ns
Turn-Off Delay Time67 ns
Element ConfigurationSingle
Fall Time11 ns
Rise Time14 ns
Gate Charge220 nC
Drain to Source Resistance1 mΩ
Nominal Vgs1.1 V
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)30 V
Gate to Source Threshold Voltage1.1 V
FET Type(Transistor Polarity)N-Channel

Stock: 2625

Distributors
pcbx
Unit Price$0.64214
Ext.Price$0.64214
QtyUnit PriceExt.Price
1$0.64214$0.64214
10$0.57859$5.78590
25$0.55902$13.97550
50$0.54012$27.00600
100$0.52186$52.18600
300$0.48787$146.36100
500$0.45609$228.04500
1000$0.44533$445.33000