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SIRA12DP-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIRA12DP-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK SO-8 SMD/SMT N-Channel number of channels:1 4.5 W 30 V Continuous Drain Current (ID):25 A 45 nC

ParameterValue
Length6.25 mm
Width5.26 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance4.3 mΩ
Height1.12 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Number of Elements1
Max Power Dissipation31 W
Power Dissipation4.5 W
Threshold Voltage1.1 V
Number of Channels1
Input capacitance2.07 nF
Continuous Drain Current (ID)25 A
Rds On Max4.3 mΩ
Drain to Source Voltage (Vdss)30 V
Turn-On Delay Time20 ns
Turn-Off Delay Time25 ns
Element ConfigurationSingle
Fall Time20 ns
Gate Charge45 nC
Drain to Source Resistance4.3 mΩ
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)30 V
Schedule B8541290080
Gate to Source Threshold Voltage1.1 V
FET Type(Transistor Polarity)N-Channel

Stock: 10983

Distributors
pcbx
Unit Price$0.41293
Ext.Price$0.41293
QtyUnit PriceExt.Price
1$0.41293$0.41293
10$0.27101$2.71010
25$0.26309$6.57725
50$0.25540$12.77000
100$0.24793$24.79300
300$0.23985$71.95500
500$0.23203$116.01500
1000$0.22447$224.47000
3000$0.21715$651.45000
5000$0.20483$1024.15000
10000$0.19321$1932.10000