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SIS407ADN-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIS407ADN-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK 1212-8 SMD/SMT P-Channel number of channels:1 3.7 W -20 V Continuous Drain Current (ID):-16.7 A 112 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Height1.12 mm
PackagingReel
RoHSCompliant
REACH SVHCNo SVHC
Contact PlatingTin
Max Power Dissipation39.1 W
Power Dissipation3.7 W
Threshold Voltage-1 V
Number of Channels1
Input capacitance5.875 nF
Continuous Drain Current (ID)-16.7 A
Rds On Max9 mΩ
Drain to Source Voltage (Vdss)-20 V
FET Type(Transistor Polarity)P-Channel
Turn-On Delay Time12 ns
Turn-Off Delay Time120 ns
Fall Time36 ns
Rise Time4 ns
Gate Charge112 nC
Drain to Source Resistance7.3 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)8 V
Drain to Source Breakdown Voltage (Vds)-20 V
Schedule B8541290080
Gate to Source Threshold Voltage400 mV

Stock: 3032

Distributors
pcbx
Unit Price$0.41293
Ext.Price$0.41293
QtyUnit PriceExt.Price
1$0.41293$0.41293
10$0.36506$3.65060
25$0.32454$8.11350
50$0.28851$14.42550
100$0.25648$25.64800
300$0.24467$73.40100
500$0.23340$116.70000
1000$0.21630$216.30000
3000$0.19407$582.21000
5000$0.17611$880.55000