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SIS410DN-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIS410DN-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK 1212-8 SMD/SMT N-Channel number of channels:1 3.8 W 20 V Continuous Drain Current (ID):35 A 41 nC

ParameterValue
Length3.05 mm
Width3.05 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance4.8 mΩ
Height1.04 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Number of Elements1
Output Current1.4 A
Max Power Dissipation5.2 W
Power Dissipation3.8 W
Threshold Voltage1.2 V
Number of Channels1
Input capacitance1.6 nF
Continuous Drain Current (ID)35 A
Rds On Max4.8 mΩ
Drain to Source Voltage (Vdss)20 V
FET Type(Transistor Polarity)N-Channel
Turn-On Delay Time25 ns
Turn-Off Delay Time30 ns
Element ConfigurationSingle
Fall Time15 ns
Rise Time15 ns
Gate Charge41 nC
Drain to Source Resistance5 mΩ
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)20 V
Gate to Source Threshold Voltage1.2 V

Stock: 18602

Distributors
pcbx
Unit Price$0.80706
Ext.Price$0.80706
QtyUnit PriceExt.Price
1$0.80706$0.80706
10$0.55741$5.57410
25$0.50919$12.72975
50$0.46514$23.25700
100$0.42490$42.49000
300$0.37687$113.06100
500$0.33427$167.13500
1000$0.30521$305.21000
3000$0.26760$802.80000
5000$0.24879$1243.95000