SIS412DN-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SIS412DN-T1-GE3
Datasheet:
Description:
MOSFETs PowerPAK 1212-8 SMD/SMT N-Channel number of channels:1 3.2 W 30 V Continuous Drain Current (ID):8.7 A 8 nC
| Parameter | Value |
|---|---|
| Length | 3.05 mm |
| Width | 3.05 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 24 MΩ |
| Height | 1.04 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Number of Elements | 1 |
| Max Power Dissipation | 15.6 W |
| Power Dissipation | 3.2 W |
| Threshold Voltage | 1 V |
| Number of Channels | 1 |
| Input capacitance | 435 pF |
| Continuous Drain Current (ID) | 8.7 A |
| Rds On Max | 24 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 5 ns |
| Turn-Off Delay Time | 15 ns |
| Rise Time | 12 ns |
| Gate Charge | 8 nC |
| Drain to Source Resistance | 20 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 1 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 7243
Distributors
pcbx
pcbxUnit Price$0.20150
Ext.Price$0.20150
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.20150 | $0.20150 |
| 10 | $0.17920 | $1.79200 |
| 50 | $0.15936 | $7.96800 |
| 100 | $0.13834 | $13.83400 |
| 500 | $0.12009 | $60.04500 |
| 1000 | $0.11552 | $115.52000 |
| 3000 | $0.11113 | $333.39000 |
| 5000 | $0.10496 | $524.80000 |