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SIS413DN-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIS413DN-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK 1212-8 SMD/SMT P-Channel number of channels:1 3.7 W -30 V Continuous Drain Current (ID):-18 A 73 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Height1.17 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Max Power Dissipation52 W
Power Dissipation3.7 W
Threshold Voltage-2.5 V
Number of Channels1
Input capacitance4.28 nF
Continuous Drain Current (ID)-18 A
Rds On Max9.4 mΩ
Drain to Source Voltage (Vdss)-30 V
Turn-On Delay Time11 ns
Turn-Off Delay Time45 ns
Element ConfigurationSingle
Rise Time11 ns
Gate Charge73 nC
Drain to Source Resistance7.6 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)-30 V
Schedule B8541290080
Gate to Source Threshold Voltage1 V
FET Type(Transistor Polarity)P-Channel

Stock: 1788

Distributors
pcbx
Unit Price$0.57552
Ext.Price$0.57552
QtyUnit PriceExt.Price
1$0.57552$0.57552
10$0.47558$4.75580
25$0.44174$11.04350
50$0.41031$20.51550
100$0.38111$38.11100
300$0.34996$104.98800
500$0.32136$160.68000
1000$0.30613$306.13000