SIS434DN-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SIS434DN-T1-GE3
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT N-Channel number of channels:1 3.8 W 40 V Continuous Drain Current (ID):35 A 40 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 7.6 mΩ |
| Height | 1.17 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 52 W |
| Power Dissipation | 3.8 W |
| Threshold Voltage | 2.2 V |
| Number of Channels | 1 |
| Input capacitance | 1.53 nF |
| Continuous Drain Current (ID) | 35 A |
| Rds On Max | 7.6 mΩ |
| Drain to Source Voltage (Vdss) | 40 V |
| Turn-On Delay Time | 10 ns |
| Turn-Off Delay Time | 25 ns |
| Element Configuration | Single |
| Fall Time | 20 ns |
| Rise Time | 25 ns |
| Gate Charge | 40 nC |
| Drain to Source Resistance | 6.3 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 40 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1.2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 32317
Distributors
pcbx
pcbxUnit Price$0.76345
Ext.Price$0.76345
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.76345 | $0.76345 |
| 10 | $0.50099 | $5.00990 |
| 25 | $0.45673 | $11.41825 |
| 50 | $0.41638 | $20.81900 |
| 100 | $0.37959 | $37.95900 |
| 300 | $0.34180 | $102.54000 |
| 500 | $0.30777 | $153.88500 |
| 1000 | $0.27614 | $276.14000 |
| 3000 | $0.23596 | $707.88000 |
| 5000 | $0.22741 | $1137.05000 |