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SIS443DN-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIS443DN-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK 1212-8 SMD/SMT P-Channel number of channels:1 3.7 W -40 V Continuous Drain Current (ID):-13.3 A 90 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Height1.1684 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Number of Elements1
Max Power Dissipation52 W
Power Dissipation3.7 W
Threshold Voltage-1 V
Number of Channels1
Input capacitance4.37 nF
Continuous Drain Current (ID)-13.3 A
Rds On Max11.7 mΩ
Drain to Source Voltage (Vdss)-40 V
Turn-On Delay Time12 ns
Turn-Off Delay Time48 ns
Fall Time10 ns
Rise Time10 ns
Gate Charge90 nC
Drain to Source Resistance9.7 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)-40 V
Gate to Source Threshold Voltage1 V
FET Type(Transistor Polarity)P-Channel

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