SIS452DN-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SIS452DN-T1-GE3
Datasheet:
Description:
MOSFETs PowerPAKA 1212-8 SMD/SMT N-Channel number of channels:1 3.8 W 12 V Continuous Drain Current (ID):35 A 41 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Max Power Dissipation | 52 W |
| Power Dissipation | 3.8 W |
| Threshold Voltage | 1.2 V |
| Number of Channels | 1 |
| Input capacitance | 1.7 nF |
| Continuous Drain Current (ID) | 35 A |
| Rds On Max | 3.25 mΩ |
| Drain to Source Voltage (Vdss) | 12 V |
| Turn-On Delay Time | 20 ns |
| Turn-Off Delay Time | 25 ns |
| Element Configuration | Single |
| Rise Time | 12 ns |
| Gate Charge | 41 nC |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 12 V |
| Schedule B | 8541290080 |
| FET Type(Transistor Polarity) | N-Channel |
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