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SIS862DN-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIS862DN-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK 1212-8 SMD/SMT N-Channel number of channels:1 52 W 60 V Continuous Drain Current (ID):40 A 32 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Height1.12 mm
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Max Power Dissipation52 W
Power Dissipation52 W
Threshold Voltage2.6 V
Number of Channels1
Input capacitance1.32 nF
Continuous Drain Current (ID)40 A
Rds On Max8.5 mΩ
Drain to Source Voltage (Vdss)60 V
Turn-On Delay Time12 ns
Turn-Off Delay Time15 ns
Element ConfigurationSingle
Rise Time5 ns
Gate Charge32 nC
Drain to Source Resistance7 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)60 V
Schedule B8541290080
Gate to Source Threshold Voltage1.5 V
FET Type(Transistor Polarity)N-Channel

Stock: 19609

Distributors
pcbx
Unit Price$0.90708
Ext.Price$0.90708
QtyUnit PriceExt.Price
1$0.90708$0.90708
10$0.61811$6.18110
25$0.55768$13.94200
50$0.50316$25.15800
100$0.45397$45.39700
300$0.40326$120.97800
500$0.35821$179.10500
1000$0.32744$327.44000
3000$0.28811$864.33000
5000$0.26760$1338.00000