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SIS892DN-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIS892DN-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK 1212-8 SMD/SMT N-Channel number of channels:1 3.7 W 100 V Continuous Drain Current (ID):30 A 14.2 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Height1.12 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Number of Elements1
Max Power Dissipation52 W
Power Dissipation3.7 W
Threshold Voltage1.2 V
Number of Channels1
Input capacitance611 pF
Continuous Drain Current (ID)30 A
Rds On Max29 mΩ
Drain to Source Voltage (Vdss)100 V
FET Type(Transistor Polarity)N-Channel
Turn-On Delay Time10 ns
Turn-Off Delay Time17 ns
Element ConfigurationSingle
Gate Charge14.2 nC
Drain to Source Resistance24 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)100 V
Schedule B8541290080
Gate to Source Threshold Voltage1.2 V

Stock: 4662

Distributors
pcbx
Unit Price$0.95154
Ext.Price$0.95154
QtyUnit PriceExt.Price
1$0.95154$0.95154
10$0.70104$7.01040
25$0.64275$16.06875
50$0.58931$29.46550
100$0.54031$54.03100
300$0.49293$147.87900
500$0.44970$224.85000
1000$0.42576$425.76000
3000$0.37531$1125.93000
5000$0.35993$1799.65000