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SISA04DN-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SISA04DN-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK 1212-8 SMD/SMT N-Channel number of channels:1 3.7 W 30 V Continuous Drain Current (ID):40 A 77 nC

ParameterValue
Length3.1496 mm
Width3.1496 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
Resistance2.15 mΩ
Height1.0668 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Number of Elements1
Max Power Dissipation52 W
Power Dissipation3.7 W
Threshold Voltage1.1 V
Number of Channels1
Input capacitance3.595 nF
Continuous Drain Current (ID)40 A
Rds On Max2.15 mΩ
Drain to Source Voltage (Vdss)30 V
FET Type(Transistor Polarity)N-Channel
Turn-On Delay Time24 ns
Turn-Off Delay Time30 ns
Element ConfigurationSingle
Fall Time20 ns
Gate Charge77 nC
Drain to Source Resistance2.15 mΩ
Nominal Vgs1.1 V
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)30 V
Schedule B8541290080
Gate to Source Threshold Voltage1.1 V

Stock: 16651

Distributors
pcbx
Unit Price$1.17040
Ext.Price$1.17040
QtyUnit PriceExt.Price
1$1.17040$1.17040
10$0.74464$7.44640
25$0.64951$16.23775
50$0.56653$28.32650
100$0.49415$49.41500
300$0.44749$134.24700
500$0.40524$202.62000
1000$0.35480$354.80000
3000$0.32573$977.19000
5000$0.29239$1461.95000