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SISA12ADN-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SISA12ADN-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAKA 1212-8 SMD/SMT N-Channel number of channels:1 28 W 30 V Continuous Drain Current (ID):25 A 45 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Number of Elements1
Max Power Dissipation28 W
Power Dissipation28 W
Threshold Voltage1.1 V
Number of Channels1
Input capacitance2.07 nF
Continuous Drain Current (ID)25 A
Rds On Max4.3 mΩ
Drain to Source Voltage (Vdss)30 V
Gate Charge45 nC
Drain to Source Resistance3.2 mΩ
Gate to Source Voltage (Vgs)-16 V, 20 V
Drain to Source Breakdown Voltage (Vds)30 V
Schedule B8541290080
Gate to Source Threshold Voltage1.1 V
FET Type(Transistor Polarity)N-Channel

Stock: 3578

Distributors
pcbx
Unit Price$0.35846
Ext.Price$0.35846
QtyUnit PriceExt.Price
1$0.35846$0.35846
10$0.31845$3.18450
50$0.28291$14.14550
100$0.24509$24.50900
500$0.21233$106.16500
1000$0.20411$204.11000
3000$0.19620$588.60000
5000$0.18512$925.60000