0%
Uploading...

SISA18ADN-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SISA18ADN-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK 1212-8 SMD/SMT N-Channel number of channels:1 19.8 W 30 V Continuous Drain Current (ID):38.3 A 21.5 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins8
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Number of Elements1
Output Current1.4 A
Max Power Dissipation19.8 W
Power Dissipation19.8 W
Threshold Voltage1.2 V
Number of Channels1
Input capacitance1 nF
Continuous Drain Current (ID)38.3 A
Rds On Max7.5 mΩ
Drain to Source Voltage (Vdss)30 V
FET Type(Transistor Polarity)N-Channel
Turn-Off Delay Time15 ns
Element ConfigurationSingle
Fall Time7 ns
Rise Time10 ns
Gate Charge21.5 nC
Drain to Source Resistance9.6 mΩ
Gate to Source Voltage (Vgs)-16 V
Drain to Source Breakdown Voltage (Vds)30 V
Gate to Source Threshold Voltage1.2 V

Stock: 1835

Distributors
pcbx
Unit Price$0.26054
Ext.Price$0.26054
QtyUnit PriceExt.Price
1$0.26054$0.26054
10$0.23319$2.33190
50$0.20870$10.43500
100$0.17571$17.57100
500$0.14793$73.96500
1000$0.14231$142.31000
3000$0.13691$410.73000
5000$0.12926$646.30000