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SISS23DN-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SISS23DN-T1-GE3

Datasheet:
Description:

MOSFETs PowerPAK 1212-8S SMD/SMT P-Channel number of channels:1 4.8 W -20 V Continuous Drain Current (ID):27 A 300 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-50 °C
Number of Pins8
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Number of Elements1
Output Current1.4 A
Max Power Dissipation57 W
Power Dissipation4.8 W
Threshold Voltage900 mV
Number of Channels1
Input capacitance8.84 nF
Continuous Drain Current (ID)27 A
Rds On Max4.5 mΩ
Drain to Source Voltage (Vdss)20 V
FET Type(Transistor Polarity)P-Channel
Turn-Off Delay Time140 ns
Element ConfigurationSingle
Fall Time50 ns
Rise Time50 ns
Gate Charge300 nC
Drain to Source Resistance4.5 mΩ
Gate to Source Voltage (Vgs)8 V
Drain to Source Breakdown Voltage (Vds)-20 V
Schedule B8541290080
Gate to Source Threshold Voltage900 mV

Stock: 513

Distributors
pcbx
Unit Price$0.80419
Ext.Price$0.80419
QtyUnit PriceExt.Price
1$0.80419$0.80419
10$0.65578$6.55780
25$0.60532$15.13300
50$0.55874$27.93700
100$0.51575$51.57500
300$0.49304$147.91200
500$0.47132$235.66000
1000$0.44843$448.43000