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SIZ710DT-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SIZ710DT-T1-GE3

Datasheet:
Description:

MOSFETs PowerPair-6 SMD/SMT N-Channel number of channels:2 4.6 W 20 V Continuous Drain Current (ID):16 A 18 nC, 60 nC

ParameterValue
Length6 mm
Width3.73 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins6
Resistance6.8 mΩ
Height750 µm
PackagingReel
RoHSCompliant
REACH SVHCUnknown
Number of Elements2
Max Power Dissipation48 W
Power Dissipation4.6 W
Threshold Voltage2.2 V
Number of Channels2
Input capacitance820 pF
Continuous Drain Current (ID)16 A
Rds On Max6.8 mΩ
Drain to Source Voltage (Vdss)20 V
FET Type(Transistor Polarity)N-Channel
Element ConfigurationDual
Fall Time12 ns
Rise Time15 ns
Gate Charge18 nC, 60 nC
Drain to Source Resistance2.7 mΩ
Nominal Vgs2.2 V
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)20 V
Schedule B8541290080
Gate to Source Threshold Voltage1 V

Stock: 244

Distributors
pcbx
Unit Price$1.27043
Ext.Price$1.27043
QtyUnit PriceExt.Price
1$1.27043$1.27043
10$0.81390$8.13900
25$0.72118$18.02950
50$0.63902$31.95100
100$0.56622$56.62200
300$0.50171$150.51300
500$0.44456$222.28000
1000$0.44456$444.56000
3000$0.44456$1333.68000
5000$0.42490$2124.50000