

| Parameter | Value |
|---|---|
| Gate to Source Threshold Voltage | -1.5 V |
| Continuous Drain Current (ID) | -4.1 A |
| Drain to Source Resistance | 55 mΩ |
| Power Dissipation | 1.2 W |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | P-Channel |
| Gate to Source Voltage (Vgs) | -10 V, 10 V |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Input capacitance | 600 pF |
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