

| Parameter | Value |
|---|---|
| Gate to Source Threshold Voltage | -1.3 V |
| Continuous Drain Current (ID) | -4.1 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 65 mΩ |
| Power Dissipation | 350 mW |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | P-Channel |
| Gate to Source Voltage (Vgs) | -12 V, 12 V |
| Input capacitance | 954 pF |
| Gate Charge | 8.5 nC |
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