

| Parameter | Value |
|---|---|
| Gate Charge | 4.2 nC |
| Gate to Source Threshold Voltage | 2 V |
| Continuous Drain Current (ID) | 6 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 44.1 mΩ |
| Input capacitance | 940 pF |
| Power Dissipation | 3.1 W |
| Number of Channels | 2 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel, P-Channel |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | -40 V |
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