SPB18P06PG
Manufacturer:
Infineon
Mfr.Part #:
SPB18P06PG
Datasheet:
Description:
MOSFETs TO-263-2 SMD/SMT P-Channel number of channels:1 80 W -60 V Continuous Drain Current (ID):-18.7 A 21 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -60 V |
| Length | 10 mm |
| Width | 4.4 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 4.5 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Current Rating | -18.6 A |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Max Power Dissipation | 81.1 W |
| Power Dissipation | 80 W |
| Threshold Voltage | -3 V |
| Number of Channels | 1 |
| Input capacitance | 690 pF |
| Continuous Drain Current (ID) | -18.7 A |
| Rds On Max | 130 mΩ |
| Drain to Source Voltage (Vdss) | -60 V |
| Turn-On Delay Time | 12 ns |
| Turn-Off Delay Time | 24.5 ns |
| Element Configuration | Single |
| Rise Time | 5.8 ns |
| Gate Charge | 21 nC |
| Drain to Source Resistance | 101 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | -3 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -60 V |
| On-State Resistance | 130 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 2.1 V |
| FET Type(Transistor Polarity) | P-Channel |
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