SPB20N60C3
Manufacturer:
Infineon
Mfr.Part #:
SPB20N60C3
Datasheet:
Description:
MOSFETs TO-263-2 SMD/SMT N-Channel number of channels:1 208 W 650 V Continuous Drain Current (ID):20.7 A 87 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 650 V |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Packaging | Reel |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| RoHS | Compliant |
| Voltage | 600 V |
| REACH SVHC | No SVHC |
| Current | 20 A |
| Current Rating | 20.7 A |
| Lifecycle Status | NRND (Last Updated: 10 months ago) |
| Max Power Dissipation | 208 W |
| Power Dissipation | 208 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Input capacitance | 2.4 nF |
| Continuous Drain Current (ID) | 20.7 A |
| Rds On Max | 190 mΩ |
| Drain to Source Voltage (Vdss) | 650 V |
| Turn-On Delay Time | 10 ns |
| Turn-Off Delay Time | 67 ns |
| Element Configuration | Single |
| Rise Time | 5 ns |
| Dual Supply Voltage | 650 V |
| Gate Charge | 87 nC |
| Drain to Source Resistance | 190 mΩ |
| Nominal Vgs | 3 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| On-State Resistance | 190 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 2.1 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 1864
Distributors
pcbx
pcbxUnit Price$2.63490
Ext.Price$2.63490
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.63490 | $2.63490 |
| 10 | $1.73380 | $17.33800 |
| 25 | $1.54500 | $38.62500 |
| 50 | $1.37676 | $68.83800 |
| 100 | $1.22683 | $122.68300 |
| 300 | $1.16904 | $350.71200 |
| 500 | $1.11397 | $556.98500 |
| 1000 | $1.00796 | $1007.96000 |
| 3000 | $0.95619 | $2868.57000 |
| 5000 | $0.90708 | $4535.40000 |
| 10000 | $0.88827 | $8882.70000 |