SPD04N80C3
Manufacturer:
Infineon
Mfr.Part #:
SPD04N80C3
Datasheet:
Description:
MOSFETs TO-252-2 SMD/SMT N-Channel number of channels:1 63 W 800 V Continuous Drain Current (ID):4 A 31 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 800 V |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Packaging | Reel |
| Lead Free | Lead Free |
| RoHS | Compliant |
| Number of Elements | 1 |
| Current Rating | 4 A |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Max Power Dissipation | 63 W |
| Power Dissipation | 63 W |
| Number of Channels | 1 |
| Input capacitance | 570 pF |
| Continuous Drain Current (ID) | 4 A |
| Rds On Max | 1.3 Ω |
| Drain to Source Voltage (Vdss) | 800 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 25 ns |
| Turn-Off Delay Time | 72 ns |
| Rise Time | 15 ns |
| Gate Charge | 31 nC |
| Drain to Source Resistance | 1.1 Ω |
| Max Dual Supply Voltage | 800 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 800 V |
| On-State Resistance | 1.3 Ω |
| Schedule B | 8541290080 |
| Package Quantity | 2500 |
| Gate to Source Threshold Voltage | 2.1 V |
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