SPU02N60C3
Manufacturer:
Infineon
Mfr.Part #:
SPU02N60C3
Datasheet:
Description:
MOSFETs TO-251-3 Through Hole N-Channel number of channels:1 25 W 600 V Continuous Drain Current (ID):1.8 A 9.5 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 650 V |
| Length | 6.73 mm |
| Width | 2.41 mm |
| Termination | Through Hole |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 6.22 mm |
| Packaging | Tube |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Current Rating | 1.8 A |
| Lifecycle Status | NRND (Last Updated: 7 months ago) |
| Max Power Dissipation | 25 W |
| Power Dissipation | 25 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Input capacitance | 200 pF |
| Continuous Drain Current (ID) | 1.8 A |
| Rds On Max | 3 Ω |
| Drain to Source Voltage (Vdss) | 600 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 6 ns |
| Turn-Off Delay Time | 68 ns |
| Element Configuration | Single |
| Fall Time | 12 ns |
| Rise Time | 3 ns |
| Dual Supply Voltage | 650 V |
| Gate Charge | 9.5 nC |
| Drain to Source Resistance | 3 Ω |
| Nominal Vgs | 3 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| On-State Resistance | 3 Ω |
| Package Quantity | 1500 |
| Gate to Source Threshold Voltage | 2.1 V |
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