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SQ2309ES-T1_GE3

Manufacturer:

Vishay

Mfr.Part #:

SQ2309ES-T1_GE3

Datasheet:
Description:

MOSFETs SOT-23 SMD/SMT P-Channel number of channels:1 2 W -60 V Continuous Drain Current (ID):-1.7 A 8.5 nC

ParameterValue
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Height1.12 mm
PackagingReel
RoHSCompliant
Output Current1.4 A
Power Dissipation2 W
Number of Channels1
Input capacitance265 pF
Continuous Drain Current (ID)-1.7 A
Drain to Source Voltage (Vdss)-60 V
FET Type(Transistor Polarity)P-Channel
Turn-On Delay Time5 ns
Turn-Off Delay Time12 ns
Gate Charge8.5 nC
Drain to Source Resistance268 mΩ
Max Junction Temperature (Tj)175 °C
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)-60 V
Schedule B8541290080
Gate to Source Threshold Voltage2.5 V

Stock: 2540

Distributors
pcbx
Unit Price$0.26362
Ext.Price$0.26362
QtyUnit PriceExt.Price
1$0.26362$0.26362
10$0.23590$2.35900
50$0.21110$10.55500
100$0.17653$17.65300
500$0.14763$73.81500
1000$0.14192$141.92000
3000$0.13642$409.26000
5000$0.12877$643.85000