SQ2361EES-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SQ2361EES-T1-GE3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 2 W -60 V Continuous Drain Current (ID):2.5 A 17 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Weight | 1.437803 g |
| Number of Elements | 1 |
| Max Power Dissipation | 2 W |
| Power Dissipation | 2 W |
| Threshold Voltage | -1.5 V |
| Number of Channels | 1 |
| Input capacitance | 545 pF |
| Continuous Drain Current (ID) | 2.5 A |
| Rds On Max | 150 mΩ |
| Drain to Source Voltage (Vdss) | -60 V |
| Turn-On Delay Time | 7 ns |
| Turn-Off Delay Time | 19 ns |
| Element Configuration | Single |
| Rise Time | 8 ns |
| Gate Charge | 17 nC |
| Drain to Source Resistance | 115 mΩ |
| Nominal Vgs | -2.5 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -60 V |
| Gate to Source Threshold Voltage | 2.5 V |
| FET Type(Transistor Polarity) | P-Channel |
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