SQ2362ES-T1_GE3
Manufacturer:
Vishay
Mfr.Part #:
SQ2362ES-T1_GE3
Datasheet:
Description:
MOSFETs TO-236-3 SMD/SMT N-Channel number of channels:1 3 W 60 V Continuous Drain Current (ID):4.3 A 7.6 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 1.12 mm |
| Packaging | Reel |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Max Power Dissipation | 5 W |
| Power Dissipation | 3 W |
| Threshold Voltage | 1.5 V |
| Number of Channels | 1 |
| Input capacitance | 1 nF |
| Continuous Drain Current (ID) | 4.3 A |
| Rds On Max | 95 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Turn-On Delay Time | 6 ns |
| Turn-Off Delay Time | 14 ns |
| Fall Time | 18 ns |
| Rise Time | 20 ns |
| Gate Charge | 7.6 nC |
| Drain to Source Resistance | 125 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Gate to Source Threshold Voltage | 2.5 V |
| FET Type(Transistor Polarity) | N-Channel |
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