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SQD50N10-8M9L_GE3

Manufacturer:

Vishay

Mfr.Part #:

SQD50N10-8M9L_GE3

Datasheet:
Description:

MOSFETs TO-252 SMD/SMT N-Channel number of channels:1 136 W 100 V Continuous Drain Current (ID):50 A 46 nC

ParameterValue
Length6.22 mm
Width6.73 mm
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Height2.38 mm
PackagingReel
RoHSCompliant
Max Power Dissipation136 W
Power Dissipation136 W
Number of Channels1
Continuous Drain Current (ID)50 A
Drain to Source Voltage (Vdss)100 V
Turn-On Delay Time12 ns
Turn-Off Delay Time95 ns
Element ConfigurationSingle
Fall Time120 ns
Rise Time12 ns
Gate Charge46 nC
Drain to Source Resistance8.99 mΩ
Gate to Source Voltage (Vgs)2 V
Drain to Source Breakdown Voltage (Vds)100 V
Schedule B8541290080
Gate to Source Threshold Voltage1.5 V
FET Type(Transistor Polarity)N-Channel

Stock: 7717

Distributors
pcbx
Unit Price$1.33882
Ext.Price$1.33882
QtyUnit PriceExt.Price
1$1.33882$1.33882
10$0.93273$9.32730
25$0.84284$21.07100
50$0.76161$38.08050
100$0.68822$68.82200
300$0.61461$184.38300
500$0.54887$274.43500
1000$0.52664$526.64000
3000$0.49708$1491.24000
5000$0.46918$2345.90000
10000$0.44286$4428.60000