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SQS423EN-T1_GE3

Manufacturer:

Vishay

Mfr.Part #:

SQS423EN-T1_GE3

Datasheet:
Description:

MOSFETs PowerPAK 1212-8 SMD/SMT P-Channel number of channels:1 62.5 W 30 V Continuous Drain Current (ID):16 A 26 nC

ParameterValue
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Pins8
PackagingReel
Radiation HardeningNo
RoHSCompliant
Number of Elements1
Power Dissipation62.5 W
Number of Channels1
Input capacitance1.975 nF
Continuous Drain Current (ID)16 A
Turn-On Delay Time65 ns
Turn-Off Delay Time23 ns
Rise Time43 ns
Gate Charge26 nC
Drain to Source Resistance18 mΩ
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)30 V
Schedule B8541290080
Gate to Source Threshold Voltage2.5 V
FET Type(Transistor Polarity)P-Channel

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