SQS482EN-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SQS482EN-T1-GE3
Datasheet:
Description:
MOSFETs PowerPAK 1212-8 SMD/SMT N-Channel number of channels:1 62 W 30 V Continuous Drain Current (ID):16 A 39 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Max Power Dissipation | 62 W |
| Power Dissipation | 62 W |
| Threshold Voltage | 2 V |
| Number of Channels | 1 |
| Input capacitance | 1.875 nF |
| Continuous Drain Current (ID) | 16 A |
| Rds On Max | 8.5 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 7 ns |
| Turn-Off Delay Time | 49 ns |
| Rise Time | 21 ns |
| Gate Charge | 39 nC |
| Drain to Source Resistance | 7 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1.5 V |
| FET Type(Transistor Polarity) | N-Channel |
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