STB120NF10T4
Manufacturer:
STMicroelectronics
Mfr.Part #:
STB120NF10T4
Datasheet:
Description:
MOSFETs D2PAK-3 SMD/SMT N-Channel number of channels:1 312 W 100 V Continuous Drain Current (ID):110 A 172 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 100 V |
| Length | 10.4 mm |
| Width | 9.35 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 10.5 mΩ |
| Height | 4.6 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 120 A |
| Lifecycle Status | Production (Last Updated: 6 months ago) |
| Max Power Dissipation | 312 W |
| Power Dissipation | 312 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 5.2 nF |
| Continuous Drain Current (ID) | 110 A |
| Rds On Max | 10.5 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 25 ns |
| Turn-Off Delay Time | 132 ns |
| Element Configuration | Single |
| Fall Time | 68 ns |
| Rise Time | 90 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 172 nC |
| Drain to Source Resistance | 10.5 mΩ |
| Nominal Vgs | 4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 2 V |
Stock: 600
Distributors
pcbx
pcbxUnit Price$3.01619
Ext.Price$3.01619
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $3.01619 | $3.01619 |
| 10 | $2.35277 | $23.52770 |
| 25 | $2.10680 | $52.67000 |
| 50 | $1.88655 | $94.32750 |
| 100 | $1.68934 | $168.93400 |
| 300 | $1.66740 | $500.22000 |
| 500 | $1.64574 | $822.87000 |
| 1000 | $1.33882 | $1338.82000 |