STB80NF10T4
Manufacturer:
STMicroelectronics
Mfr.Part #:
STB80NF10T4
Datasheet:
Description:
MOSFETs D2PAK-3 SMD/SMT N-Channel number of channels:1 300 W 100 V Continuous Drain Current (ID):80 A 135 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 100 V |
| Length | 10.4 mm |
| Width | 9.35 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 15 MΩ |
| Height | 4.6 mm |
| Packaging | Reel |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 80 A |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Max Power Dissipation | 300 W |
| Power Dissipation | 300 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Input capacitance | 5.5 nF |
| Continuous Drain Current (ID) | 80 A |
| Rds On Max | 15 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 26 ns |
| Turn-Off Delay Time | 116 ns |
| Element Configuration | Single |
| Fall Time | 60 ns |
| Rise Time | 80 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 135 nC |
| Drain to Source Resistance | 15 mΩ |
| Nominal Vgs | 3 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 2 V |
Stock: 195
Distributors
pcbx
pcbxUnit Price$1.53706
Ext.Price$1.53706
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.53706 | $1.53706 |
| 10 | $1.40227 | $14.02270 |
| 25 | $1.34796 | $33.69900 |
| 50 | $1.29575 | $64.78750 |
| 100 | $1.24558 | $124.55800 |
| 300 | $1.22548 | $367.64400 |
| 500 | $1.20571 | $602.85500 |
| 1000 | $1.18893 | $1188.93000 |