STD10NF10T4
Manufacturer:
STMicroelectronics
Mfr.Part #:
STD10NF10T4
Datasheet:
Description:
MOSFETs DPAK SMD/SMT N-Channel number of channels:1 50 W 100 V Continuous Drain Current (ID):13 A 21 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 100 V |
| Length | 6.6 mm |
| Width | 6.2 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 130 mΩ |
| Height | 2.4 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 4.535924 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 13 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 50 W |
| Power Dissipation | 50 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Input capacitance | 460 pF |
| Continuous Drain Current (ID) | 13 A |
| Rds On Max | 130 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Turn-On Delay Time | 16 ns |
| Turn-Off Delay Time | 32 ns |
| Element Configuration | Single |
| Rise Time | 25 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 21 nC |
| Drain to Source Resistance | 115 mΩ |
| Nominal Vgs | 3 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 193
Distributors
pcbx
pcbxUnit Price$0.72854
Ext.Price$0.72854
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.72854 | $0.72854 |
| 10 | $0.58013 | $5.80130 |
| 25 | $0.52812 | $13.20300 |
| 50 | $0.48077 | $24.03850 |
| 100 | $0.43766 | $43.76600 |
| 300 | $0.41409 | $124.22700 |
| 500 | $0.39178 | $195.89000 |
| 1000 | $0.36879 | $368.79000 |